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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA1870B
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The PA1870B is a switching device which can be driven directly by a 2.5 V power source. The PA1870B features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
8
PACKAGE DRAWING (Unit: mm)
5 1 2, 3 4 5 6, 7 8 :Drain1 :Source1 :Gate1 :Gate2 :Source2 :Drain2
1.2 MAX. 1.00.05 0.25 3 +5 -3 0.10.05 0.5 0.6 +0.15 -0.1
FEATURES
* 2.5 V drive available * Low on-state resistance RDS(on)1 = 16.0 m TYP. (VGS = 4.5 V, ID = 3.0 A) RDS(on)2 = 16.5 m TYP. (VGS = 4.0 V, ID = 3.0 A) RDS(on)3 = 20.0 m TYP. (VGS = 2.5 V, ID = 3.0 A) * Built-in G-S protection diode against ESD
1 4
0.145 0.055
3.15 0.15 3.0 0.1
6.4 0.2 4.4 0.1 1.0 0.2
ORDERING INFORMATION
PART NUMBER PACKAGE Power TSSOP8
0.65 0.27 +0.03 -0.08
0.8 MAX. 0.10 M
0.1
PA1870BGR-9JG
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC)
Note 1 Note 2 Note 1
VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg
2
20.0 12.0 6.0 80.0 2.0 150 -55 to +150
V V
EQUIVALENT CIRCUIT
Drain1 Drain2
A A W C C
Gate1 Gate Protection Diode Source1 Body Diode Gate2 Gate Protection Diode Source2 Body Diode
Drain Current (pulse)
Total Power Dissipation Channel Temperature Storage Temperature
Notes 1. Mounted on ceramic substrate of 50 cm x 1.1 mm 2. PW 10 s, Duty Cycle 1% Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. G16741EJ1V0DS00 (1st edition) Date Published October 2003 NS CP(K) Printed in Japan
2003
PA1870B
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance
Note Note
SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3
TEST CONDITIONS VDS = 20.0 V, VGS = 0 V VGS = 12.0 V, VDS = 0 V VDS = 10.0 V, ID = 1.0 mA VDS = 10.0 V, ID = 3.0 A VGS = 4.5 V, ID = 3.0 A VGS = 4.0 V, ID = 3.0 A VGS = 2.5 V, ID = 3.0 A VDS = 10.0 V VGS = 0 V f = 1.0 MHz VDD = 10.0 V, ID = 3.0 A VGS = 4.0 V RG = 10
MIN.
TYP.
MAX. 1.0 10.0
UNIT
A A
V S
0.5 5 12.0 13.0 15.0
1.0
1.5
Drain to Source On-state Resistance
16.0 16.5 20.0 720 166 125 48 245 315 305
20.0 21.0 27.0
m m m pF pF pF ns ns ns ns nC nC nC V ns nC
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Note
Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr
VDD = 16.0 V ID = 6.0 A VGS = 4.0 V IF = 6.0 A, VGS = 0 V IF = 6.0 A, VGS = 0 V di/dt = 50 A/s
8.0 1.7 3.5 0.8 295 450
Note Pulsed: PW 350 s, Duty Cycle 2%
TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE
D.U.T. RL VGS PG. RG
Wave Form
D.U.T. VGS
0 10%
IG = 2 mA VGS
90%
RL VDD
VDD
PG.
90% 90% 10% 10%
50
VDS VGS 0 = 1 s Duty Cycle 1% VDS VDS
Wave Form
0
td(on) ton
tr
td(off) toff
tf
2
Data Sheet G16741EJ1V0DS
PA1870B
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - %
120 2.5
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE PT - Total Power Dissipation - W
Mounted on ceramic board of
100 80 60 40 20 0 0 25 50 75 100 125 150 175
2
50 cm2 x 1.1 mm, 2 units
1.5
Mounted on FR-4 board of 50 cm2 x 1.6 mm, 2 units
1
0.5
0 0 25 50 75 100 125 150 175
TA - Ambient Temperature - C
TA - Ambient Temperature - C
FORWARD BIAS SAFE OPERATING AREA
1000
RDS(on) Limited (at VGS = 4.5 V) PW = 10 s
ID - Drain Current - A
100
10
ID(DC) 1 ms
1
DC (2 units)
10 ms 100 ms
0.1
Single pulse Mounted on ceramic board of 50 cm x 1.1 mm
2
0.01 0.1 1 10 100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(ch-A) - Transient Thermal Resistance - C/W
1000
Mounted on FR-4 board of 25 cm x 1.6 mm
2
100
Mounted on ceramic board of 50 cm x 1.1 mm
2
10
1
Single pulse PD (FET1) : PD (FET2) = 1:1
0.1
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet G16741EJ1V0DS
3
PA1870B
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
25
Pulsed VGS = 4.5 V 4.0 V
FORWARD TRANSFER CHARACTERISTICS
100
VDS = 10.0 V Pulsed
ID - Drain Current - A
ID - Drain Current - A
20
10 1 0.1 0.01 0.001 0.0001
TA = 125C 75C 25C -25C
15
10
2.5 V
5
0 0 0.1 0.2 0.3 0.4 0.5
0.5
1
1.5
2
2.5
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE | yfs | - Forward Transfer Admittance - S
1.5 100
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
VDS = 10.0 V Pulsed
VGS(off) - Gate Cut-off Voltage - V
VDS = 10.0 V ID = 1.0 mA
10
1
1
TA = -25C 25C 75C 125C
0.5 -50 0 50 100 150
0.1 0.01
0.1
1
10
Tch - Channel Temperature - C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - m RDS(on) - Drain to Source On-state Resistance - m
50
VGS = 4.5 V Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
50
VGS = 4.0 V Pulsed
40
TA = 125C 75C 25C -25C
40
TA = 125C 75C 25C -25C
30
30
20
20
10
1 0
0 0.01
0 0.01 0.1 1 1 0 1 00
0.1
1
10
100
ID - Drain Current - A
ID - Drain Current - A
4
Data Sheet G16741EJ1V0DS
PA1870B
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - m
50
VGS = 2.5 V Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - m
50
ID = 3.0 A Pulsed
40
30
TA = 125C 75C 25C -25C
40
30
20
20
10
10
0 0.01
0 0 2 4 6 8 10 12
0.1
1
10
100
ID - Drain Current - A
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - m
50
ID = 3.0 A Pulsed
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
40
VGS = 2.5 V 4.0 V 4.5 V
Ciss, Coss, Crss - Capacitance - pF
VGS = 0 V f = 1.0 MHz
1000
Ciss
30
20
100
Coss Crss
10
0 -50 0 50 100 150
10 0.1 1 10 100
Tch - Channel Temperature - C
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
1000 5
DYNAMIC INPUT CHARACTERISTICS
ID = 6.0 A
td(on), tr, td(off), tf - Switching Time - ns
td(off)
VGS - Gate to Source Voltage - V
4
VDD = 4.0 V 10.0 V 16.0 V
tf
3
100
tr
2
td(on) VDD = 10.0 V VGS = 4.0 V RG = 10
1
10 0.1 1 10
0 0 2 4 6 8 10
ID - Drain Current - A
QG - Gate Charge - nC
Data Sheet G16741EJ1V0DS
5
PA1870B
SOURCE TO DRAIN FORWARD VOLTAGE
100
VGS = 0 V Pulsed
IF - Diode Forward Current - A
10
1
0.1
0.01 0.4 0.6 0.8 1.0 1.2
VF(S-D) - Source to Drain Voltage - V
6
Data Sheet G16741EJ1V0DS
PA1870B
* The information in this document is current as of October, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
M8E 02. 11-1

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